Plasma-enhanced chemical vapor deposition of zinc oxide at atmospheric pressure and low temperature
نویسنده
چکیده
The plasma-enhanced chemical vapor deposition of aluminum-doped zinc oxide has been demonstrated for the first time at 800Torr and under 250 1C. A film resistivity of 3 10 2 O cm and a transparency of 95% from 375 to 2500 nm was obtained for deposition at 20mTorr diethylzinc, 1.0 Torr CO2, 799Torr He, a TMAl/DEZn ratio of 1:100, 41W=cm RF power, and 225 1C. The average aluminum concentration in the ZnO film was 5:4 10 cm . It was found that, while the growth rate did not change with substrate temperature, both the resistivity and optical absorption coefficient declined with increasing temperature. r 2007 Elsevier B.V. All rights reserved.
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